Magnetoresistive element and magnetic memory using the same

ABSTRACT

According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/427,732, filed Mar. 22, 2012, which is based upon and claims thebenefit of priority from prior Japanese Patent Application No.2011-148445, filed Jul. 4, 2011, the entire contents of each of whichare incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a magnetoresistiveelement and a magnetic memory using the magnetoresistive element.

BACKGROUND

A magnetoresistive element having a ferromagnetic tunnel junction isalso called a magnetic tunnel junction (MTJ) element, and a write method(spin transfer torque writing method) using the spin-momentum-transfer(SMT) has been proposed as a write method of the MTJ element.

There is a method of using a so-called perpendicular magnetization filmhaving the axis of easy magnetization in a direction perpendicular tothe film plane as a ferromagnetic material forming the magnetoresistiveelement. When using magnetocrystalline anisotropy in a perpendicularmagnetization arrangement, the element size can be made smaller thanthat of an in-plane magnetization structure because no shape magneticanisotropy is used. In addition, dispersion in the direction of easymagnetization can be decreased. By using a material having largeperpendicular magnetocrystalline anisotropy, therefore, it is expectedto realize both smaller element size and lower switching current whilemaintaining the thermal stability.

The perpendicular magnetization arrangement has the problem that a largestrayed magnetic field is generated as small size progresses. A strayedmagnetic field from a fixed layer (reference layer) shifts a switchingfield in a storage layer in a direction in which a parallel arrangementis stable, thereby increasing a switching current. To avoid thisproblem, a magnetic layer (shift cancelling layer) having amagnetization direction antiparallel to that in the fixed layer must beadded to cancel the strayed magnetic field from the fixed layer.

If a large strayed magnetic field is generated as small size progresses,it becomes difficult for the shift cancelling layer to adjust thestrayed magnetic field from the fixed layer. Accordingly, it isnecessary to perform adjustment so as to decrease the saturationmagnetization and film thickness of the fixed layer, and adjust thestructure so as to increase the saturation magnetization of the shiftcancelling layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a magnetoresistive element of a firstembodiment;

FIG. 2 is a sectional view of a magnetoresistive element of a firstmodification according to the first embodiment;

FIGS. 3A and 3B are a graph showing the dependence on the Ru filmthickness of an element having a pseudo top-pinned structure accordingto the first embodiment;

FIG. 4 is a graph showing a hysteresis loop when the Ru film thicknessis 0.6 nm in the first embodiment;

FIG. 5 is a graph showing the hysteresis loop of an element having apseudo bottom-pinned structure according to the first embodiment;

FIG. 6 is a circuit diagram showing the arrangement of an MRAM of asecond embodiment;

FIG. 7 is a sectional view of a memory cell in the MRAM of the secondembodiment;

FIG. 8 is a block diagram showing a DSL data path unit of a DSL modem asan application example;

FIG. 9 is a block diagram showing a cell phone terminal as anapplication example;

FIG. 10 is a plan view showing an MRAM card as an application example;

FIG. 11 is a plan view showing a card insertion type transfer apparatusas an application example;

FIG. 12 is a sectional view showing the card insertion type transferapparatus as an application example;

FIG. 13 is a sectional view showing a fitting type transfer apparatus asan application example; and

FIG. 14 is a sectional view showing a sliding type transfer apparatus asan application example.

DETAILED DESCRIPTION

In the following explanation, the same reference numerals denoteconstituent elements having almost the same functions and arrangements,and a repetitive explanation will be made only when necessary. However,it should be noted that the drawings are exemplary views, so therelationship between the thickness and the planar dimension, the ratioof the thickness of each layer, and the like are different from actualones. Accordingly, practical thicknesses and dimensions should be judgedby referring to the following explanation. Also, the individual drawingsof course include portions having different dimensional relationshipsand different ratios.

Note also that each embodiment to be explained below exemplarilydiscloses an apparatus and/or method for embodying the technical idea ofthe present invention, and the technical idea of the present inventiondoes not specify the materials, shapes, structures, layouts, and thelike of components to those described below. The technical idea of thepresent invention can variously be changed within the scope of theappended claims.

In general, according to one embodiment, a magnetoresistive elementincludes a first magnetic layer, a second magnetic layer and a firstnonmagnetic layer. The first magnetic layer has an axis of easymagnetization perpendicular to a film plane, and a variablemagnetization direction. The second magnetic layer has an axis of easymagnetization perpendicular to a film plane, and an invariablemagnetization direction. The first nonmagnetic layer is provided betweenthe first magnetic layer and the second magnetic layer. The secondmagnetic layer includes a third magnetic layer, a fourth magnetic layer,and a second nonmagnetic layer formed between the third magnetic layerand the fourth magnetic layer. The third magnetic layer is in contactwith the first nonmagnetic layer and includes Co and at least one of Zr,Nb, Mo, Hf, Ta, and W.

First Embodiment

The first embodiment is directed to a magnetoresistive element.

(1) Structure of Magnetoresistive Element

FIG. 1 is a sectional view of the magnetoresistive element of the firstembodiment.

Referring to FIG. 1, each arrow indicates a magnetization direction. Amagnetoresistive element mentioned in this specification and theappended claims means a tunneling magnetoresistive effect (TMR) elementusing a semiconductor or insulator as a spacer layer. Also, thefollowing drawings show the main parts of the magnetoresistive element,but other layers may also be included as long as the arrangements shownin the drawings are included.

A magnetoresistive element 1 writes information by the spin transfertorque magnetization reversal method. That is, in accordance with thedirection of a spin polarization current supplied to each layer in adirection perpendicular to the film plane, the relative angle ofmagnetization between a storage layer and fixed layer is made tocorrespond to binary information “0” or “1” by changing the angle into aparallel or antiparallel state (i.e., the minimal or maximal of theresistance), thereby storing information.

As shown in FIG. 1, the magnetoresistive element 1 includes at least twomagnetic layers 2 and 3, and a nonmagnetic layer 4 formed between themagnetic layers 2 and 3. The magnetic layer 3 has the axis of easymagnetization in the direction perpendicular to the film plane, and themagnetization direction rotates. The magnetic layer 3 will be called astorage layer (a free layer, magnetization free layer, magnetizationvariable layer, or recording layer) hereinafter. The properties of thestorage layer 3 will be described in detail later. Magnetization in thedirection perpendicular to the film plane will be called perpendicularmagnetization hereinafter.

The magnetic layer 2 has the axis of easy magnetization in the directionperpendicular to the film plane, and the magnetization direction isinvariable. The magnetic layer 2 will be called a fixed layer (amagnetization fixed layer, reference layer, magnetization referencelayer, pinned layer, standard layer, or magnetization standard layer)hereinafter.

The fixed layer (magnetic layer) 2 includes magnetic layers 21 and 22,and a nonmagnetic layer 23 formed between the magnetic layers 21 and 22.The magnetic layers 21 and 22 have antiparallel magnetization directionswith the nonmagnetic layer 23 being sandwiched between them. Also, themagnetic layer 21 includes two ferromagnetic layers, i.e., a firstferromagnetic material 31 and second ferromagnetic material 32, and afirst nonmagnetic material 33 formed between the first ferromagneticmaterial 31 and second ferromagnetic material 32. The firstferromagnetic material 31 and second ferromagnetic material 32 haveparallel magnetization directions with the first nonmagnetic material 33being sandwiched between them. The total film thickness of the firstferromagnetic material 31, second ferromagnetic material 32, and firstnonmagnetic material 33 is desirably 5 nm or less.

The properties of the fixed layer 2 will be described in detail later.Note that the magnetization direction in the fixed layer 2 may pointeither in the opposite direction to the substrate (upward) or in thedirection to the substrate (downward).

The nonmagnetic layer (tunnel barrier layer) 4 is made of an insulatingfilm such as an oxide. The properties of the nonmagnetic layer 4 will bedescribed in more detail later.

The magnetoresistive element 1 is a magnetoresistive element for use inthe spin-transfer-torque writing method. That is, when writinginformation, an electric current is supplied from the fixed layer 2 tothe storage layer 3, or from the storage layer 3 to the fixed layer 2,in the direction perpendicular to the film plane, thereby injectingelectrons in which spin information is accumulated, into the storagelayer 3 from the fixed layer 2.

The spin angular momentum of the injected electrons is transferred toelectrons in the storage layer 3 in accordance with the spin angularmomentum conservation law, thereby switching the magnetization of thestorage layer 3. That is, the magnetization direction of the storagelayer 3 changes in accordance with an electric current bi-directionallyflowing through the storage layer 3, nonmagnetic layer 4, and fixedlayer 2.

FIG. 1 shows a so-called, top-pinned structure (bottom-free structure)in which the storage layer 3 is formed on an underlying layer 5, and thefixed layer 2 is formed on the nonmagnetic layer 4.

The underlying layer 5 may also be formed below the storage layer 3. Theunderlying layer 5 is used to control the crystallinity such as thecrystal orientation and crystal grain size of each layer above thestorage layer 3. An unshown substrate (e.g., a silicon semiconductorsubstrate) exists below the underlying layer 5. Details of theproperties of the storage layer 3 will be described later.

A cap layer 6 may also be formed on the fixed layer 2. The cap layer 6mainly functions as a protective layer, e.g., prevents the oxidation ofthe magnetic layer.

The magnetic layer 21 forming the fixed layer 2 has a multilayeredstructure including the first ferromagnetic material 31, secondferromagnetic material 32, and first nonmagnetic material 33, and hasperpendicular magnetic anisotropy. To achieve perpendicular magneticanisotropy, the first ferromagnetic material 31 is a CoFe alloy or analloy (Co_(100-x)—Fe_(x))_(100-y)B_(y) containing Co, Fe, and B wherex≧50 at % and 0<y≦30 at %, and the first nonmagnetic material 33 is anelement selected from Zr, Nb, Mo, Hf, Ta, or W, or an alloy mainlycontaining at least the element. The ferromagnetic material 32 desirablycontains Co as a main component in order to couple with the magneticlayer 22 by exchange coupling via the nonmagnetic layer 23.

The nonmagnetic layer 23 desirably contains Ru, and the film thicknessis desirably 0.4 (inclusive) to 1.0 (inclusive) nm. The magnetic layer22 need only contain a general material system having perpendicularmagnetic anisotropy. However, it is necessary to appropriately adjustthe saturation magnetization and film thickness of the magnetic layer 22so as to be able to cancel the shift of the switching magnetic field inthe storage layer by a strayed magnetic field from the magnetic layer 21having the multilayered structure including the first ferromagneticmaterial 31, second ferromagnetic material 32, and first nonmagneticmaterial 33.

Next, the magnetoresistive element 1 of a modification of the firstembodiment will be explained.

FIG. 2 is a sectional view of the modification of the magnetoresistiveelement shown in FIG. 1.

The structure shown in FIG. 2 differs from that shown in FIG. 1 in thatan interface layer 11 is inserted between the recording layer 3 andnonmagnetic layer 4. The interface layer 11 is made of a ferromagneticmaterial, and has an effect of reducing a lattice mismatch in theinterface between the storage layer 3 and nonmagnetic layer 4. It isalso possible to achieve an effect of obtaining a high tunnelingmagnetoresistance ratio (TMR ratio) and high spin transfer torqueefficiency by using a high-polarization material as the interface layer11. The properties of the interface layer 11 will be described in detaillater.

(2) Fixed Layer

As described above, the fixed layer 2 has the multilayered structureincluding the magnetic layers 21 and 22 and nonmagnetic layer 23. Also,the magnetic layer 21 has the multilayered structure including the firstferromagnetic material 31, second ferromagnetic material 32, and firstnonmagnetic material 33. However, annealing after formation may make themultilayered structures unclear and give each element a concentrationgradient.

The magnetic layer 21 has perpendicular magnetic anisotropy. To achieveperpendicular magnetic anisotropy, the first ferromagnetic material 31is an alloy (Co_(100-x)—Fe_(x))_(100-y)B_(y) containing Co, Fe, and Bwhere x≧50 at % and 0<y≦30 at %, and the first nonmagnetic material 33is an element selected from Zr, Nb, Mo, Hf, Ta, or W, or an alloy mainlycontaining at least the element.

The results of the examination of a combination of the firstferromagnetic material 31 and first nonmagnetic material 33 andperpendicular magnetic anisotropy will be described below. A firstnonmagnetic material (Zr, Nb, Mo, Hf, Ta, or W), first ferromagneticmaterial (FeCoB), and MgO (3 nm) were sequentially formed on a siliconsubstrate. Since the degree of mixing with the first ferromagneticmaterial changes from one nonmagnetic material to another, anisotropyfields (Hk) when the magnetic moment per unit area was about 1×10⁻⁴emu/cm² were compared. The anisotropy field was calculated by applying amagnetic field in the in-plane direction of the film, and measuring andevaluating a hysteresis loop on the axis of hard magnetization by usinga vibrating sample magnetometer. Consequently, the anisotropy field was2 kOe for all the nonmagnetic materials, i.e., Zr, Nb, Mo, Hf, Ta, andW, indicating perpendicular magnetic anisotropy. An anisotropy field of5 kOe or more was obtained for Nb, Mo, Ta, and W.

The second ferromagnetic material 32 desirably contains Co in order tocouple with the magnetic layer 22 by exchange coupling via thenonmagnetic layer 23. The nonmagnetic layer desirably contains Ru, andthe film thickness is desirably 0.4 (inclusive) to 1.0 (inclusive) nm.

FIG. 3A shows the dependence of an exchange coupling magnetic field onthe Ru film thickness of the nonmagnetic layer 23 in a pseudo top-pinnedstructure in which the first ferromagnetic material 31 was FeCoB (1.1nm), the first nonmagnetic material 33 was Ta (0.4 nm), the secondferromagnetic material 32 was Co (0.4 nm), and the magnetic layer 22 hada multilayer of [Co (0.3 nm)/Pt (0.6 nm)]×6. Note that each numericalvalue in the parentheses indicates the film thickness.

No clear antiparallel state was formed when the Ru film thickness was0.4 (inclusive) to 0.5 (inclusive) nm. A large exchange couplingmagnetic field was obtained when the Ru film thickness was 0.6(inclusive) to 0.7 (inclusive) nm. A maximum exchange coupling magneticfield was obtained when the Ru film thickness was 0.7 nm.

FIG. 4 shows a hysteresis loop (MH loop) when the Ru film thickness was0.6 nm. The MH loop was measured with a vibrating sample magnetometer.By thus properly selecting particularly the first ferromagnetic material31 and first nonmagnetic material 33, it is possible to implement aperpendicular magnetization type synthetic anti-ferro structure in whichthe total film thickness of the fixed layer 2 is very small.

FIG. 3B shows the dependence of an exchange coupling magnetic field onthe Ru film thickness in a pseudo top-pinned structure in which themagnetic layer 21 contained FeCoB (1.2 nm), and the magnetic layer 22had a multilayer of [Co(0.3 nm)/Pt(0.6 nm)]×6. Note that each numericalvalue in the parentheses indicates the film thickness. Ta was added togive the magnetic layer 21 perpendicular magnetic anisotropy.

A clear antiparallel state was formed and a large exchange couplingmagnetic field was obtained from an Ru film thickness of 0.4 nm.

FIG. 5 shows the MH loop of a pseudo bottom-pinned structure in whichthe first ferromagnetic material 31 was FeCoB (1.4 nm), the firstnonmagnetic material 33 was Ta (0.3 nm), the second ferromagneticmaterial 32 was Co (0.5 nm), and the magnetic layer 22 contained a CoPtalloy (5 nm). Note that each numerical value in the parenthesesindicates the film thickness. The film thickness of Ru as thenonmagnetic layer 23 was 1 nm.

FIG. 5 reveals that the magnetization directions in the magnetic layers21 and 22 were antiparallel. Also, in the top-pinned structure asdescribed above, the exchange coupling magnetic field was maximum whenthe Ru film thickness was about 0.7 nm. In the bottom-pinned structure,however, the exchange coupling magnetic field was maximum when the Rufilm thickness was about 1 nm, unlike in the top-pinned structure. Thisdemonstrates that an optimal Ru film thickness changes in accordancewith the structure. That is, the Ru film thickness changes in accordancewith the structures of the upper and lower magnetic layers, and perhapsshifts by about 0.3 nm from that in the top-pinned structure. Therefore,it is desirable to appropriately adjust the Ru film thickness within therange of 0.7 (inclusive) to 1.3 (inclusive) nm.

In either the top-pinned structure or the bottom-pinned structure, it isimportant to use neither Pt nor Pd that readily achieves highperpendicular magnetic anisotropy between the nonmagnetic layers 4 and23. This makes it possible to achieve both thinning of the fixed layer 2and a high magnetoresistance ratio (MR ratio).

(3) Storage Layer

When using a perpendicular magnetization film as the storage layer 3 ofthe magnetoresistive element 1, the element size can be made smallerthan that of an in-plane magnetization type element because no shapemagnetic anisotropy is used as described previously. In addition, it ispossible to form the storage layer 3 by using a material having highperpendicular magnetic anisotropy to achieve both small size and a lowswitching current while maintaining the thermal stability. Necessaryproperties of the storage layer and practical examples of materialselection will be explained in detail below.

(3-1) Necessary Properties of Storage Layer

When using a perpendicular magnetization material as the storage layer,a thermal stability factor Δ is represented as in Equation (1) below byusing the ratio of an effective anisotropic energy K_(u) ^(eff)·V to athermal energy k_(B)T.

$\begin{matrix}\begin{matrix}{\Delta = {{K_{u}^{eff} \cdot {V/k_{B}}}T}} \\{= {{\left( {K_{u} - {2\pi \; {NM}_{S}^{2}}} \right) \cdot {{Va}/k_{B}}}T}}\end{matrix} & (1)\end{matrix}$

where

K_(u): perpendicular magnetic anisotropy energy

M_(S): saturation magnetization

N: demagnetization coefficient

Va: magnetization reversal unit volume

To avoid the problem (thermal disturbance) that the thermal energyfluctuates magnetization, a thermal stability factor Δ larger than 60(Δ>60) is a necessary condition. If the element size or film thicknessis decreased in order to increase the capacity, however, Va decreases,and this may make stored information unable to maintain (=thermaldisturbance), and unstable.

Accordingly, it is desirable to select a material having a largeperpendicular magnetic anisotropy energy K_(u) and/or small saturationmagnetization M_(S) as the storage layer.

On the other hand, a critical current I_(C) required for magnetizationreversal by the perpendicular magnetization type spin-transfer-torquewriting method is generally expressed as in Equation (2):

Ic∝α/η·Δ  (2)

Where

α: magnetic relaxation constant

η: spin transfer torque efficiency coefficient

(3-2) Storage Layer Materials

The storage layer material can appropriately be selected from thefollowing materials in consideration of the above-mentionedcharacteristics.

(3-2-1) Ordered Alloy System

An ordered alloy to be used as the storage layer 3 is an alloycontaining one or more elements selected from Fe, Co, and Ni, and one ormore elements selected from Pt and Pd, and having an L1₀ crystalstructure. Examples of the ordered alloy are Fe₅₀Pt₅₀, Fe₅₀Pd₅₀,Co₅₀Pt₅₀, Fe₃₀Ni₂₀Pt₅₀, Co₃₀Fe₂₀Pt₅₀, and Co₃₀Ni₂₀Pt₅₀. These orderedalloys are not limited to the above-mentioned composition ratios.

The effective magnetic anisotropic energy and saturation magnetizationcan be adjusted by adding, to these ordered alloys, impurity elementssuch as Cu (copper), Cr (chromium), and Ag (silver) or alloys of theseelements, and insulators. When selecting a material having a largelattice mismatch with the nonmagnetic layer 4 as the storage layer 3,the interface layer 11 is preferably inserted between the nonmagneticlayer 4 and storage layer 3 as shown in FIG. 2.

(3-2-2) Multilayer System

A multilayer to be used as the storage layer 3 is a structure obtainedby alternately stacking one element selected from Fe, Co, and Ni or analloy containing one or more of these elements, and one element selectedfrom Cr, Pt, Pd, Ir, Rh, Ru, Os, Re, Au, and Cu or an alloy containingone or more of these elements. Examples are a Co/Pt multilayer, a Co/Pdmultilayer, a CoCr/Pt multilayer, a Co/Ru multilayer, Co/Os, Co/Au, anda Ni/Cu multilayer.

The effective magnetic anisotropic energy and saturation magnetizationof these multilayers can be adjusted by adding elements to the magneticlayer, and adjusting the film thickness ratio of the magnetic layer tothe nonmagnetic layer and the stacking period. The use of thesemultilayered films as the storage layer 3 is in many cases unfavorableto achieve a high tunneling magnetoresistance ratio (TMR ratio), becausethe lattice mismatch with the nonmagnetic layer 4 is large. In thiscase, as shown in FIG. 2, the interface layer is preferably insertedbetween the nonmagnetic layer 4 and storage layer 3.

(3-2-3) Disordered Alloy System

A disordered alloy to be used as the storage layer 3 is a metal mainlycontaining cobalt (Co), and containing one or more elements selectedfrom chromium (Cr), tantalum (Ta), niobium (Nb), vanadium (V), tungsten(W), hafnium (Hf), titanium (Ti), zirconium (Zr), platinum (Pt),palladium (Pd), iron (Fe), and nickel (Ni). Examples are a CoCr alloy,CoPt alloy, CoCrPt alloy, CoCrPtTa alloy, and CoCrNb alloy.

The effective magnetic anisotropic energy and saturation magnetizationof these alloys can be adjusted by increasing the ratio of thenonmagnetic element. The use of these alloys as the storage layer 3 isin many cases unfavorable to achieve a high tunneling magnetoresistanceratio (TMR ratio), because the lattice mismatch with the nonmagneticlayer 4 is large. In this case, as shown in FIG. 2, the interface layer11 is preferably inserted between the nonmagnetic layer 4 and storagelayer 3.

(4) Underlying Layer

As indicated in the detailed explanation of the storage layer 3described above, to form a perpendicular magnetization film having theaxis of easy magnetization in the direction perpendicular to the filmplane, it is necessary to form a structure in which an atomically closedpacked surface is readily oriented. That is, the crystal orientationmust be controlled to orient the fcc(111) plane and hcp(001) plane, andthe selection of an underlying layer material and multilayeredarrangement is important for the purpose.

(4-1) Multilayered Arrangement and Materials of Underlying Layer

When forming the storage layer 3 or fixed layer 2 on the underlyinglayer 5, the underlying layer 5 can be selected as follows in accordancewith a material system.

When using a multilayer system such as Co/Pt, Co/Pd, or Co/Ni, an fcc orhcp CoPd alloy or CoPt alloy, or an RE-TM ordered alloy (e.g., Sm—Co) asthe underlying layer 5, a metal having an atomically closed packedstructure is desirable. Examples of the metal having an atomicallyclosed packed structure are Pt, Pd, Ir, and Ru.

It is also possible to use an alloy containing two metal elements, orthree or more metal elements, instead of one metal element. Examples arePt—Pd and Pt—Ir. Furthermore, it is possible to use, e.g., Pt—Cu, Pd—Cu,Ir—Cu, Pt—Au, Ru—Au, Pt—Al, or Ir—Al as an alloy of the above-describedmetal and an fcc metal such as Cu, Au, or Al, or to use, e.g., Pt—Re,Pt—Ti, Ru—Re, Ru—Ti, Ru—Zr, or Ru—Hf as an alloy of the above-describedmetal and an hcp metal such as Re, Ti, Zr, or Hf.

Since the smoothness worsens if the film thickness of the underlyinglayer 5 is too large, the film thickness range is favorably 30 nm orless. The underlying layer 5 may also have a multilayered structure. Themultilayered structure is used in order to adjust the lattice constantby stacking materials having different lattice constants. For example,when the underlying layer 5 has a multilayered structure in which Pt isformed on Ru, the lattice constant of Pt becomes different from that ofa bulk under the influence of Ru. As described previously, however, thelattice constant can also be adjusted by using an alloy, so one of Ruand Pt may be omitted.

When the underlying layer has a multilayered structure, it is possibleto improve the smoothness or the crystal orientation of thedense-structure metal by using, e.g., Ta or Ti as the lowermost layer.If the film thickness of Ta or Ti as the lowermost layer is too large,the deposition time prolongs, and the productivity decreases. On theother hand, if the film thickness is too small, the above-describedorientation controlling effect is lost. Therefore, the film thickness ispreferably 1 to 10 nm.

As the L1₀ ordered alloys such as FePt and FePd, (100)-oriented fccmetals such as Pt and Pd, bcc metals such as Cr, and compounds havingthe NaCl structure such as TiN and MgO are desirable.

Also, when using the RE-TM amorphous alloy, the underlying layer may bemade of only a material system that also functions as an adhesion layer,such as Ta, because the alloy is amorphous.

(5) Nonmagnetic Layer

An oxide having the NaCl structure is favorable as the material of thenonmagnetic layer 4 of the magnetoresistive element 1. Practicalexamples are MgO, CaO, SrO, TiO, VO, and NbO. When the magnetizationdirections in the storage layer 3 and fixed layer 2 are antiparallel, aspin-polarized Δ1 band dominates tunnel conduction, so only majorityspin electrons contribute to the conduction. Consequently, themagnetoresistive element 1 decreases the conductivity and increases theresistance value.

By contrast, when the magnetization directions in the storage layer 3and fixed layer 2 are parallel, a Δ5 band that is not spin-polarizeddominates the conduction, so the magnetoresistive element 1 increasesthe conductivity and decreases the resistance value. Accordingly, theformation of the Δ1 band is important to achieve a high tunnelingmagnetoresistance ratio (TMR ratio).

To form the Δ1 band, the (100) plane of the nonmagnetic layer 4 made ofthe oxide having the NaCl structure must well match with the interfacebetween the storage layer 3 and fixed layer 2.

The interface layer 11 can also be inserted in order to further improvethe lattice matching in the (100) plane of the nonmagnetic layer 4 madeof the oxide layer having the NaCl structure. To form the Δ1 band, it ismore preferable to select, as the interface layer 11, a material bywhich lattice mismatch in the (100) plane of the nonmagnetic layer 4 is5% or less.

(6) Interface Layer

To increase the tunneling magnetoresistance ratio (TMR ratio), aninterface layer may be formed in the interface of the fixed layer(magnetic layer) 2 in contact with the nonmagnetic layer 4 of themagnetoresistive element 1.

The interface layer is preferably made of a high-polarization material,practically, an alloy (Co_(100-x)—Fe_(x))_(100-y)B_(y) containing Co,Fe, and B where x≧20 at % and 0<y≦30 at %.

When using these magnetic materials as the interface layer, latticemismatch between the fixed layer 2 and nonmagnetic layer 4 is reduced.In addition, the effect of achieving a high tunneling magnetoresistanceratio (TMR ratio) and high spin transfer torque efficiency can beexpected because the materials are high-polarization materials.

As has been explained above, this embodiment can provide amagnetoresistive element capable of reducing a strayed magnetic fieldfrom the fixed layer, which increases as small size advances, therebyallowing the stable existence of the two magnetization states in thestorage layer, i.e., the parallel and antiparallel states. Also, if thefilm thickness of the shift cancelling layer becomes too large in orderto cancel the strayed magnetic field from the fixed layer, the aspectratio of the magnetoresistive element increases, and this makes themagnetoresistive element difficult to downsize. Since, however, thisembodiment can prevent the increase in film thickness of the shiftcancelling layer, the aspect ratio of the magnetoresistive element doesnot increase, and this facilitates small size the magnetoresistiveelement.

Second Embodiment

A magnetic random access memory (MRAM) of the second embodiment will beexplained below with reference to FIGS. 6 and 7. The MRAM of the secondembodiment uses the magnetoresistive element of the first embodiment asa memory element.

FIG. 6 is a circuit diagram showing the arrangement of the MRAM of thesecond embodiment.

As shown in FIG. 6, this MRAM includes a memory cell array 40 includinga plurality of memory cells MC arranged in a matrix. In the memory cellarray 40, a plurality of bit line pairs BL and /BL run in the columndirection, and a plurality of word lines WL run in the row direction.

The memory cells MC are arranged at the intersections of the bit linesBL and word lines WL. Each memory cell MC includes a magnetoresistiveelement 1, and a selection transistor (e.g., an n-channel MOStransistor) 41. One terminal of the magnetoresistive element 1 isconnected to the bit line BL. The other terminal of the magnetoresistiveelement 1 is connected to the drain terminal of the selection transistor41. The source terminal of selection transistor 41 is connected to thebit line /BL. The gate terminal of the selection transistor 41 isconnected to the word line WL.

A row decoder 42 is connected to the word lines WL. A write circuit 44and read circuit 45 are connected to the bit line pairs BL and /BL. Acolumn decoder 43 is connected to the write circuit 44 and read circuit45. The row decoder 42 and column decoder 43 select each memory cell MC.

Data is written in the memory cell MC as follows. First, to select amemory cell MC as a data write target, the word line WL connected to thememory cell MC is activated. This turns on the selection transistor 41.

In this state, a bidirectional write current Iw is supplied to themagnetoresistive element 1 in accordance with write data. Morespecifically, when supplying the write current Iw to themagnetoresistive element 1 from the left to the right, the write circuit44 applies a positive voltage to the bit line BL, and the ground voltageto the bit line /BL. When supplying the write current Iw to themagnetoresistive element 1 from the right to the left, the write circuit44 applies a positive voltage to the bit line /BL, and the groundvoltage to the bit line BL. Thus, data “0” or “1” can be written in thememory cell MC.

Next, data read from the memory cell MC is performed as follows. First,the selection transistor 41 of a memory cell MC to be selected is turnedon. The read circuit 45 supplies a read current Ir flowing from theright to the left, for example, to the magnetoresistive element 1. Thatis, the read current Ir is supplied from the bit line /BL to the bitline BL. Based on the read current Ir, the read circuit. 45 detects theresistance value of the magnetoresistive element 1. Then, the readcircuit 45 reads out data stored in magnetoresistive element 1 based onthe detected resistance value.

The structure of the MRAM of this embodiment will now be explained withreference to FIG. 7. FIG. 7 is a sectional view showing one memory cellMC.

As shown in FIG. 7, the memory cell MC includes the magnetoresistiveelement (MTJ) 1 and selection transistor 41. An element isolationinsulating layer 46 is formed in the surface region of a p-typesemiconductor substrate 51. The surface region of the semiconductorsubstrate 51 in which no element isolation insulating layer 46 is formedis an active area where an element is to be formed. The elementisolation insulating layer 46 is formed by, e.g., shallow trenchisolation (STI). Silicon oxide or the like is used as the STI.

In the active area of the semiconductor substrate 51, a source region Sand drain region D spaced apart from each other are formed. Each of thesource region S and drain region D is an n⁺-type diffusion region formedby heavily doping an n⁺-type impurity into the semiconductor substrate51.

A gate insulating film 41A is formed on the semiconductor substrate 51between the source region S and drain region D. A gate electrode 41B isformed on the gate insulating film 41A. The gate electrode 41B functionsas the word line WL. The selection transistor 41 is thus formed on thesemiconductor substrate 51.

On the source region S, an interconnect layer 53 is formed on a contact52. The interconnect layer 53 functions as the bit line /BL. On thedrain region D, a lead line 55 is formed on a contact 54.

On the lead line 55, the magnetoresistive element 1 sandwiched between alower electrode 7 and upper electrode 9 is formed. An interconnect layer56 is formed on the upper electrode 9. The interconnect layer 56functions as the bit line BL. Also, the portion between thesemiconductor substrate 51 and interconnect layer 56 is filled with aninterlayer dielectric layer 57 made of, e.g., silicon oxide.

In the second embodiment as described in detail above, an MRAM can befabricated by using the magnetoresistive element 1. Note that themagnetoresistive element 1 can also be used as a domain walldisplacement type magnetic memory, in addition to a spin transfer torquetype magnetic memory.

The MRAM disclosed in the second embodiment is applicable to variousapparatuses. Several application examples of the MRAM will be explainedbelow.

(1) Application Example 1

FIG. 8 specifically shows a digital subscriber line (DSL) data path unitof a DSL modem.

This modem includes a programmable digital signal processor (DSP) 100,analog-to-digital (A/D) converter 110, digital-to-analog (D/A) converter120, transmission driver 130, and receiver amplifier 140.

FIG. 8 shows no bandpass filter. Instead, FIG. 8 shows an MRAM 170 ofthe second embodiment and an EEPROM (Electrically Erasable andProgrammable ROM) 180, as various types of optional memories for holdinga line code program (a program to be executed by the DSP to select andoperate a modem in accordance with, e.g., subscriber line information tobe coded, and transmission conditions (line codes; QAM, CAP, RSK, FM,AM, PAM, and DWMT).

Note that this application example uses the two types of memories, i.e.,the MRAM 170 and EEPROM 180 as the memories for holding the line codeprogram, but the EEPROM 180 may also be replaced with an MRAM. That is,MRAMs alone may also be used instead of the two types of memories.

(2) Application Example 2

FIG. 9 shows a cell phone terminal 300 as another application example.

A communication unit 200 for implementing a communication functionincludes a transmitting/receiving antenna 201, an antenna duplexer 202,a receiver 203, a baseband processor 204, a DSP 205 to be used as avoice codec, a speaker (receiving apparatus) 206, a microphone(transmitting apparatus) 207, a transmitter 208, and a frequencysynthesizer 209.

The cell phone terminal 300 also includes a controller 220 forcontrolling each unit of the cell phone terminal 300. The controller 220is a microcomputer formed by connecting a CPU 221, a ROM 222, an MRAM223 of the second embodiment, and a flash memory 224 via a bus 225.

Programs to be executed by the CPU 221 and necessary data such asdisplay fonts are prestored in the ROM 222.

The MRAM 223 is mainly used as a work area when, e.g., the CPU 221stores data currently being calculated and the like as needed whileexecuting programs, or temporarily stores data to be exchanged betweenthe controller 220 and each unit.

The flash memory 224 is used to store setting parameters when using amethod by which immediately preceding setting conditions and the likeare stored when the power supply of the cell phone terminal 300 isturned off, and the same setting conditions are used when the powersupply is turned on next time. Accordingly, the stored settingparameters do not disappear when the power supply of the cell phoneterminal 300 is turned off.

In addition, the cell phone terminal 300 includes an audio datareproduction processor 211, an external output terminal 212, an LCDcontroller 213, an LCD (Liquid Crystal Display) 214 for display, and aringer 215 for generating a ringing tone.

The audio data reproduction processor 211 reproduces audio data input tothe cell phone terminal 300 (or audio information (audio data) stored inthe external memory 240 (to be described later)). The reproduced audiodata (audio information) can be extracted outside by transmitting thedata to headphones or portable speakers via the external output terminal212.

Audio information can be reproduced by using the audio data reproductionprocessor 211 as described above. The LCD controller 213 receivesdisplay information from, e.g., the CPU 221 via the bus 225, convertsthe received information into LCD control information for controllingthe LCD 214, and displays the information by driving the LCD 214.

Furthermore, the cell phone terminal 300 includes interface circuits(I/Fs) 231, 233, and 235, an external memory 240, an external memoryslot 232, a key operation unit 234, and an external input/outputterminal 236. The external memory 240 such as a memory card is insertedinto the external memory slot 232. The external memory slot 232 isconnected to the bus 225 via the interface circuit (I/F) 231.

By thus forming the slot 232 in the cell phone terminal 300, internalinformation of the cell phone terminal 300 can be written in theexternal memory 240, or information (e.g., audio information) stored inthe external memory 240 can be input to the cell phone terminal 300.

The key operation unit 234 is connected to the bus 225 via the interfacecircuit (I/F) 233. Key input information input from the key operationunit 234 is transmitted to, e.g., the CPU 221. The external input/outputterminal 236 is connected to the bus 225 via the interface circuit (I/F)235. The external input/output terminal 236 functions as a terminal forinputting various kinds of external information to the cell phoneterminal 300, or outputting information outside from the cell phoneterminal 300.

Note that this application example uses the ROM 222, MRAM 223, and flashmemory 224, but it is also possible to replace the flash memory 224 withan MRAM, and further replace the ROM 222 with an MRAM.

(3) Application Example 3

FIGS. 10, 11, 12, 13, and 14 illustrate examples in each of which theMRAM is applied to a card (MRAM card) such as Smart Media for storingmedia contents.

As shown in FIG. 10, an MRAM chip 401 is incorporated into an MRAM cardmain body 400. The card main body 400 has an opening 402 formed in aposition corresponding to the MRAM chip 401, thereby exposing the MRAMchip 401. The opening 402 has a shutter 403 that protects the MRAM chip401 when this MRAM card is carried. The shutter 403 is made of amaterial, e.g., ceramic, having the effect of blocking an externalmagnetic field.

When transferring data, the MRAM chip 401 is exposed by opening theshutter 403. An external terminal 404 is used to extract content datastored in the MRAM card outside.

FIGS. 11 and 12 show a card insertion type transfer apparatus fortransferring data to the MRAM card.

A data transfer apparatus 500 includes a container 500 a. The container500 a contains a first MRAM card 550. The container 500 a includes anexternal terminal 530 electrically connected to the first MRAM card 550.Data in the first MRAM card 550 is rewritten by using the externalterminal 530.

A second MRAM card 450 used by an end user is inserted from an insertionportion 510 of the transfer apparatus 500 as indicated by the arrow, andpushed until it is stopped by a stopper 520. The stopper 520 alsofunctions as a member for aligning the first MRAM 550 and second MRAMcard 450. When the second MRAM card 450 is set in a predeterminedposition, a first MRAM data rewrite controller supplies a control signalto the external terminal 530, and data stored in the first MRAM card 550is transferred to the second MRAM card 450.

FIG. 13 is a sectional view showing a fitting type transfer apparatusfor transferring data to the MRAM card.

In a transfer apparatus 600, the second MRAM card 450 is fitted on thefirst MRAM 550 as indicated by the arrow by using the stopper 520 as atarget. A transfer method is the same as that of the card insertion typeapparatus, so a repetitive explanation will be omitted.

FIG. 14 is a sectional view showing a sliding type transfer apparatusfor transferring data to the MRAM card.

Like a CD-ROM drive or DVD drive, a receiving slide 560 is formed in atransfer apparatus 700, and moves as indicated by the arrows. When thereceiving slide 560 has moved to a position indicated by the brokenlines, the second MRAM card 450 is placed on the receiving slide 560,and conveyed into the transfer apparatus 700 as the receiving slide 560moves.

A transfer method and a feature that the second MRAM card 450 isconveyed such that the distal end portion abuts against the stopper 520are the same as those of the card insertion type apparatus, so arepetitive explanation will be omitted.

The MRAM explained in the second embodiment can be used for, e.g., afile memory capable of high-speed random write, a portable terminalcapable of high-speed download, a portable player capable of high-speeddownload, a semiconductor memory for a broadcasting apparatus, a driverecorder, a home video system, a large-capacity buffer memory forcommunication, and a semiconductor memory for a surveillance camera, andhas great industrial merits.

As has been explained above, this embodiment can provide a magneticmemory using a magnetoresistive element capable of reducing a strayedmagnetic field from the fixed layer, which increases as small sizeadvances, thereby allowing the stable existence of the two magnetizationstates in the storage layer, i.e., the parallel and antiparallel states.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

1. (canceled)
 2. A semiconductor storage device comprising: a firstlayer including a first magnetic layer; a second layer; and a thirdlayer including a first nonmagnetic layer and provided between the firstlayer and the second layer, wherein the second layer includes a secondmagnetic layer, a third magnetic layer, and a second nonmagnetic layerformed between the second magnetic layer and the third magnetic layer,the second magnetic layer includes Co and at least one of Zr, Nb, Mo,Hf, Ta, and W, and the third magnetic layer is thicker than the secondmagnetic layer.
 3. The element according to claim 1, wherein the secondmagnetic layer includes a first magnetic material, a second magneticmaterial, and a first nonmagnetic material formed between the firstmagnetic material and the second magnetic material, and the firstmagnetic material is in contact with the third layer.
 4. The elementaccording to claim 2, wherein the second magnetic material includes Co.5. The element according to claim 2, wherein the first magnetic materialincludes Co and Fe.
 6. The element according to claim 2, wherein thefirst magnetic material includes one of a CoFe alloy and an alloy(Co_(100-x)—Fe_(x))_(100-y)B_(y) containing Co, Fe, and B where x≧50 at% and 0<y≦30 at %.
 7. The element according to claim 2, wherein thefirst nonmagnetic material includes at least one of Zr, Nb, Mo, Hf, Ta,and W.
 8. The element according to claim 1, wherein the secondnonmagnetic layer includes Ru.
 9. The element according to claim 7,further comprising an underlying layer formed on a surface of the firstlayer, which is opposite to a surface on which the third layer isformed, wherein a film thickness of the Ru is 0.4 (inclusive) to 1.0(inclusive) nm.
 10. The element according to claim 7, further comprisingan underlying layer formed on a surface of the second layer, which isopposite to a surface on which the third layer is formed, wherein a filmthickness of the Ru is 0.7 (inclusive) to 1.3 (inclusive) nm.
 11. Theelement according to claim 1, wherein the second magnetic layer and thethird magnetic layer have antiparallel magnetization directions.
 12. Theelement according to claim 2, wherein the first magnetic material andthe second magnetic material have parallel magnetization directions. 13.The element according to claim 1, wherein saturation magnetization and afilm thickness of the third magnetic layer are adjusted to cancel ashift of a switching field in the first layer by a strayed magneticfield from the second magnetic layer.
 14. The element according to claim1, further comprising an interface layer formed between the first layerand the third layer and having high polarization.
 15. The elementaccording to claim 13, wherein the interface layer includes Co and Fe.16. The element according to claim 13, wherein the interface layerincludes an alloy (Co_(100-x)—Fe_(x))_(100-y)B_(y) containing Co, Fe,and B where x≧20 at % and 0<y≦30 at %.
 17. The element according toclaim 1, further comprising an interface layer formed between the secondlayer and the third layer and having high polarization.
 18. The elementaccording to claim 16, wherein the interface layer includes Co and Fe.19. The element according to claim 16, wherein the interface layerincludes an alloy (Co_(100-x)—Fe_(x))_(100-y)B_(y) containing Co, Fe,and B where x≧20 at % and 0<y≦30 at %.